EFS1J

www.DataSheet4U.com WTE POWER SEMICONDUCTORS EFS1J Pb 1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE Features ! ! ! ! ! ! ! Glass Passivated Die Construction Ideally Suited for Automatic Assembly B Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss A Super-Fast Recovery Time F Plastic Case Material has UL Flammability Classification Rating 94V-O C H G




















































































E SMA/DO-214AC Dim Min Max 2.50 2.90 A 4.00 4.60 B 1.20 1.60 C 0.152 0.305 D 4.80 5.28 E 2.00 2.44 F 0.051 0.203 G 0.76 1.52 H All Dimensions in mm D Mechanical Data ! ! ! ! ! ! Case: SMA/DO-214AC, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.064 grams (approx.) Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TL = 75°C Symbol VRRM VRWM VR VR(RMS) IO @TA=25°C unless otherwise specified EFS1J Unit 600 420 1.0 V V A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 1) Typical Junction Capacitance...