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EIC0910-25 Datasheet

Part Number EIC0910-25
Manufacturers Excelics Semiconductor
Logo Excelics Semiconductor
Description 9.50-10.50 GHz 25-Watt Internally Matched Power FET
Datasheet EIC0910-25 DatasheetEIC0910-25 Datasheet (PDF)

www.DataSheet4U.com EIC0910-25 9.50-10.50 GHz 25-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • 9.50 – 10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44 dBm Output Power at 1dB Compression 7 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC0910-25 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTE.

  EIC0910-25   EIC0910-25






Part Number EIC0910-2
Manufacturers Excelics Semiconductor
Logo Excelics Semiconductor
Description Internally Matched Power FET
Datasheet EIC0910-25 DatasheetEIC0910-2 Datasheet (PDF)

www.DataSheet4U.com EIC0910-2 UPDATED 08/21/2007 9.50-10.50GHz 2-Watt Internally-Matched Power FET FEATURES • • • • • • • 9.50 –10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 22.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Com.

  EIC0910-25   EIC0910-25







9.50-10.50 GHz 25-Watt Internally Matched Power FET

www.DataSheet4U.com EIC0910-25 9.50-10.50 GHz 25-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • 9.50 – 10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44 dBm Output Power at 1dB Compression 7 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC0910-25 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH 1. Caution! ESD sensitive device. MIN 43 6 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 5000mA Gain at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 5000mA Gain Flatness f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 5000mA Power Added Efficiency at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 5000mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 TYP 44 7 MAX UNITS dBm dB ±0.6 30 6800 11 -2.5 1.4 8300 16 -4.0 1.8 o dB % mA A V C/W f = 9.50-10.50GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 130 mA 2. Tested with 15 Ohm gate resistor, forward and reverse gate current should not exceed 105mA and -10.5mA respectively Overall Rth depends on case mounting. MAXIMUM RATING AT 25°C1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Input Power Channel Temperature Storage Temperature Total Power Dissipation ABS.


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