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EIC0910A-8 FET Datasheet PDF

Internally Matched Power FET

Internally Matched Power FET

 

 

Part Number EIC0910A-8
Description Internally Matched Power FET
Feature www.DataSheet4U.com EIC0910A-8 ISSUED D ATE: 10/09/2007 9.20-10.00 GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • • 9.20-10 .0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Pow er at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Eff iciency -46 dBc IM3 at PO = 28dBm SCL H ermetic Metal Flange Package 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.20-10.0GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Co.
Manufacture Excelics Semiconductor
Datasheet
Download EIC0910A-8 Datasheet

EIC0910A-8

 

 

 


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Part Number EIC0910A-8
Description Internally Matched Power FET
Feature www.DataSheet4U.com EIC0910A-8 ISSUED D ATE: 10/09/2007 9.20-10.00 GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • • 9.20-10 .0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Pow er at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Eff iciency -46 dBc IM3 at PO = 28dBm SCL H ermetic Metal Flange Package 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.20-10.0GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Co.
Manufacture Excelics Semiconductor
Datasheet
Download EIC0910A-8 Datasheet

EIC0910A-8

 

 

 

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