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EIC1010A-12 Datasheet

Part Number EIC1010A-12
Manufacturers Excelics Semiconductor
Logo Excelics Semiconductor
Description Internally Matched Power FET
Datasheet EIC1010A-12 DatasheetEIC1010A-12 Datasheet (PDF)

www.DataSheet4U.com EIC1010A-12 ISSUED: 07/24/2007 10.0-10.25 GHz 12-Watt Internally Matched Power FET Excelics FEATURES • • • • • • 10.0-10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package EIC1010A-12 .827±.010 .669 .120 MIN .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CH.

  EIC1010A-12   EIC1010A-12






Internally Matched Power FET

www.DataSheet4U.com EIC1010A-12 ISSUED: 07/24/2007 10.0-10.25 GHz 12-Watt Internally Matched Power FET Excelics FEATURES • • • • • • 10.0-10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package EIC1010A-12 .827±.010 .669 .120 MIN .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Gain Flatness f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Drain Current at 1dB Compression f = 10.0-10.25GHz Output 3rd Order Intermodulation Distortion ∆f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L Vds = 9 V, IDSQ ≈ 65% IDSS f = 10.25GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 39.5 6.0 TYP 40.5 7.0 MAX UNITS dBm dB ±0.5 30 3300 -40 -43 5800 -2.5 2.3 7200 -4.0 2.6 o dB % 3700 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 58 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 50 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain.


2009-08-04 : TS-H552B    PIC16CR73    PIC16CR74    PIC16CR76    PIC16CR77    EIC0910-12    EIC0910-2    EIC0910-4    EIC0910-5    EIC0910-8   


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