EIC1314-8

www.DataSheet4U.com EIC1314-8 ISSUED 2/06/2009 13.75-14.5 GHz 8-Watt Internally Matched Power FET FEATURES 13.75– 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 24% Power Added Efficiency Hermetic Metal Flange Package EIC1314-8 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE IMD3 Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400mA Gain at 1dB Compression f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400mA Gain Flatness f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400mA Power Added Efficiency at 1dB Compression f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400mA Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 14.50 GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance3 2) S.C.L. = Single Carrier Level. 1,2 Caution! ESD sensitive device. MIN 38.5 5.0 TYP 39.0 6.0 MAX UNITS dBm dB ±0.6 24 -44 -47 2500 4000 -2.5 3.5 2800 6000 -4.0 4.0 o dB % dBc mA mA V C/W f = 13.75-14.5GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA Note: 1) Tested with 15 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Po...