EKI10126

100 V, 66 A, 8.8 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI10126 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 66 A  RDS(ON) -------- 12.1 mΩ max. (VGS = 10 V, ID = 33.0 A)  Qg------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.5 V Gate Drive  100 % UIL Tested  RoHS Compliant Package TO-220 (4) D (1) (2) (3) GDS Applications  DC-DC converters  Synchronous Rectification  Power Supplies Equivalent circuit D(2)(4) G(1) S(3) Not to scale Absolute Maximum Ratings  Unless otherwise specified, TA = 25 °C Parameter Symbol Drain to Source Voltage VDS Gate to Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) IDM IS ISM Single Pulse Avalanche Energy EAS Avalanche Current Power Dissipation Operating Junction Temperature Storage Temperature Range IAS PD TJ TSTG Test conditions TC = 25 °C PW ≤ 100µs Duty cycle ≤ 1 % PW ≤ 100µs Duty cycle ≤ 1 % VDD = 50 V, L = 1 mH, IAS = 13 A, unclamped, RG = 4.7 Ω Refer to Figure 1 TC = 25 °C Rating 100 ± 20 66 132 66 132 170 30 135 150 − 55 to 150 Unit V V A A A A mJ A W °C °C EKI10126-DS Rev.1.3 May. 29, 2014 SANKEN ELECTRIC CO.,LTD. http://www.sanken-ele.co.jp 1 EKI10126 Thermal Characteristics  Unless otherwise specified, TA = 25 °C Parameter Symbo...