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EM1C

EIC

SILICON RECTIFIER DIODES

www.eicsemi.com EM1B ~ EM1C PRV : 800 ~ 1000 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge cur...


EIC

EM1C

File Download Download EM1C Datasheet


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www.eicsemi.com EM1B ~ EM1C PRV : 800 ~ 1000 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SILICON RECTIFIER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Peak Reverse Voltage Maximum Peak Reverse Surge Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current (50 Hz, Half-cycle, Sine Wave, Single Shot) Maximum Forward Voltage at IF = 1.0 A Maximum Reverse Current at Reverse Voltage Ta = 25 °C Maximum Reverse Current at Reverse Voltage Ta = 100 °C Junction Temperature Range Storage Temperature Range SYMBOL VRM VRSM VR IF(AV) IFSM VF IR IR(H) TJ TSTG EM1B EM1C 800 1000 850 1050 800 1000 1.0 35 0.97 20 100 - 40 to + 150 - 40 to + 150 UNIT V V V A A V µA µA °...




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