www.eicsemi.com
EM1B ~ EM1C
PRV : 800 ~ 1000 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge cur...
www.eicsemi.com
EM1B ~ EM1C
PRV : 800 ~ 1000 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward
voltage drop * Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
SILICON RECTIFIER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0)
0.034 (0.86) 0.028 (0.71)
1.00 (25.4) MIN.
0.205 (5.2) 0.166 (4.2)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Peak Reverse
Voltage Maximum Peak Reverse Surge
Voltage Maximum Reverse
Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current (50 Hz, Half-cycle, Sine Wave, Single Shot) Maximum Forward
Voltage at IF = 1.0 A Maximum Reverse Current at Reverse
Voltage Ta = 25 °C Maximum Reverse Current at Reverse
Voltage Ta = 100 °C Junction Temperature Range Storage Temperature Range
SYMBOL
VRM VRSM
VR IF(AV)
IFSM
VF IR IR(H) TJ TSTG
EM1B
EM1C
800 1000
850 1050
800 1000
1.0
35
0.97 20 100 - 40 to + 150 - 40 to + 150
UNIT
V V V A
A
V µA µA °...