EMH1405

Ordering number : ENA1667A EMH1405 N-Channel Power MOSFET 30V, 8.5A, 19mΩ, Single EMH8 http://onsemi.com Features ON-resistance RDS(on)1=14mΩ(typ) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Ratings 30 ±20 8.5 34 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7045-001 0.2 8 5 0.125 EMH1405-TL-H Product & Package Information Package : EMH8 JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Taping Type : TL Marking 0.05 0.75 0.2 1.7 0.2 2.1 1 0.5 2.0 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain EMH8 TL Electrical Connection 8765 KE LOT No. 1234 Semiconductor Components Industries, LLC, 2013 July, 2013 51612 TKIM TC-00002377/60210PE TK IM TC-00002377 No. A1667-1/7 EMH1405 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ...