EMM5832VU

www.DataSheet4U.com Preliminary FEATURES ・High Output Power: Pout=31.0dBm (typ.) ・High Linear Gain: GL=23.0dB (typ.) ・Broad Band: 21.2~26.5GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5832VU is a MMIC amplifier that contains a four-stage amplifier, internally matched, for standard communications band in the 21.2 to 26.5GHz frequency range. Eudyna Devices’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature ES/EMM5832VU K-Band Power Amplifier MMIC Device の Rating 10 -3 22 Unit V V dBm ℃ Symbol VDD VGG Pin Tstg -55 to +125 RECOMMENDED OPERATING CONDITIONS Item Symbol VDD Drain-Source Voltage Input Power Operating Case Temperature Pin TC Condition ≦7 ≦12 -40 to +85 Unit V dBm ℃ ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25℃) Item RF Frequency Range Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency at 1dB G.C.P. Drain Current at 1dB G.C.P. 3rd. Order Intermodulation Distortion * Input Return Loss (at Pin=-20dBm) Output Return Loss (at Pin=-20dBm) Symbol f P1dB G1dB Nadd IDDRF IM3 RLIN RLOUT * df=+10MHz Po=20dBm S.C.L Test Conditions VDD=+6V IDD(DC)=800mA typ. ZS=ZL=50ohm Min. 21.2 TBD TBD TBD Limits Typ. Max. 26.5 31 21 20 1000 33 -8 TBD TBD Unit GHz dBm dB % mA dBc dB -8 dB G.C.P. : Gain Compression Point S.C.L. : Single Carrier Level ~199V...