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EN29LV400

Eon Silicon Solution

4M Flash Memory

www.DataSheet4U.com EN29LV400 EN29LV400 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory...


Eon Silicon Solution

EN29LV400

File Download Download EN29LV400 Datasheet


Description
www.DataSheet4U.com EN29LV400 EN29LV400 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES 3V, single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors. High performance - Access times as fast as 45 ns Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 1 µA typical standby current (standard access time to active mode) Flexible Sector Architecture: - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode) - One 8 Kword, two 4 Kword, one 16 Kword and seven 32 Kword sectors (word mode) - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors. High performance program/erase speed - Byte/Word program time: 8µs typical - Sector erase time: 500ms typical JEDEC Standard program and erase commands JEDEC standard DATA polling and toggle bits feature Single Sector and Chip Erase Sector Unprotect Mode Embedded Erase and Program Algorithms Erase Suspend / Resume modes: Read or program another Sector duri...




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