EPC2031

eGaN® FET DATASHEET EPC2031 – Enhancement Mode Power Transistor VDS , 60 V RDS(on) , 2.6 mΩ ID , 48 A D G S EPC2031 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings PARAMETER VALUE VDS Drain-to-Source Voltage (Continuous) Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) ID Continuous (TA = 25°C, RθJA = 11°C/W) Pulsed (25°C, TPULSE = 300 µs) VGS Gate-to-Source Voltage Gate-to-Source Voltage 60 72 48 450 6 -4 TJ Operating Temperature TSTG Storage Temperature -40 to 150 -40 to 150 UNIT V A V °C EPC2031 eGaN® FETs are supplied only in passivated die form with solder bumps. Die Size: 4.6 mm x 2.6 mm High Frequency DC-DC Conversion Motor Drive Industrial Automation Synchronous Rectification Class-D Audio Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 0.45 RθJB Thermal Resistance, Junction-to-Board 3.9 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 45 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/docume...