EPC2036

eGaN® FET DATASHEET EPC2036 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 73 mΩ ID , 1.7 A D G S EPC2036 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 100 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 120 V ID Continuous (TA = 25°C, RθJA = 340°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage 1.7 A 18 6 V –4 TJ Operating Temperature TSTG Storage Temperature –40 to 150 °C –40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 6 RθJB Thermal Resistance, Junction-to-Board 49 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details PARAMETER Static Characteristics (TJ= 25°C unless otherwise stated) TEST CONDITIONS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 300 µA ID...