EPC2036 Datasheet

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EPC2036 Datasheet - Enhancement Mode Power Transistor

EPC2036   EPC2036  

Datasheet: EPC2036 datasheet

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Description: eGaN® FET DATASHEET EPC2036 – Enhanc ement Mode Power Transistor VDS , 100 V RDS(on) , 73 mΩ ID , 1.7 A D G S EPC2036 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), wh ile its lateral device structure and ma jority carrier diode provide exceptiona lly low QG and zero QRR. The end result is a device that can handle tasks wher e very high switching frequency, and lo w on-time are beneficial as well as tho se where on-state losses dominate. Max imum Ratings PARAMETER VALUE VDS Dr ain-to-Source Voltage (Continuous) Drai n-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 100 120 ID Continuous (

Manufacture Part Number Description



Enhancement Mode Power Transistor

Alternate Search Terms:
EPC2036 datasheet EPC2036 component EPC2036 integrated circuit EPC2036 schematic EPC2036 application note PC2036 C2036 2036 EPC203 EPC20 EPC2

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