eGaN® FET DATASHEET
EPC2045 – Enhancement Mode Power Transistor
VDS , 100 V RDS(on) , 7 mΩ ID , 16 A
D G
S
EPC2045
E...
eGaN® FET DATASHEET
EPC2045 – Enhancement Mode Power Transistor
VDS , 100 V RDS(on) , 7 mΩ ID , 16 A
D G
S
EPC2045
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VALUE
UNIT
Drain-to-Source
Voltage (Continuous)
100
VDS Drain-to-Source
Voltage (up to 10,000 5 ms pulses at 150°C)
120
V
Continuous (TA = 25°C)
ID
Pulsed (25°C, TPULSE = 300 µs)
Gate-to-Source
Voltage VGS
Gate-to-Source
Voltage
TJ Operating Temperature
TSTG Storage Temperature
16 A
130 6 V -4
-40 to 150 °C
-40 to 150
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Junction-to-Case
1.4
RθJB Thermal Resistance, Junction-to-Board
8.5
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
64
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC2045 eGaN® FETs are supplied passivated die form with solder bumps Die size: 2.5 mm x 1.5 mm
Applications Open Rack Server Architectures Lidar/Pulsed ...