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ES1G-T Datasheet

Part Number ES1G-T
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Surface Mount Super Fast Rectifier
Datasheet ES1G-T DatasheetES1G-T Datasheet (PDF)

ES1D-T - ES1J-T Taiwan Semiconductor 1A, 200V - 600V Surface Mount Super Fast Rectifier FEATURES ● Glass passivated junction chip ● Ideal for automated placement ● Super fast recovery time for high efficiency ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● Converter KEY PARAMETERS PARAMETER VALUE UNIT IF(AV) VRRM IFSM TJ MAX Package.

  ES1G-T   ES1G-T






Surface Mount Super Fast Rectifier

ES1D-T - ES1J-T Taiwan Semiconductor 1A, 200V - 600V Surface Mount Super Fast Rectifier FEATURES ● Glass passivated junction chip ● Ideal for automated placement ● Super fast recovery time for high efficiency ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● Converter KEY PARAMETERS PARAMETER VALUE UNIT IF(AV) VRRM IFSM TJ MAX Package 1A 200 - 600 V 30 A 150 °C DO-214AC (SMA) Configuration Single Die MECHANICAL DATA ● Case: DO-214AC (SMA) ● Molding compound meets UL 94V-0 flammability rating ● Moisture sensitivity level: level 1, per J-STD-020 ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: As marked ● Weight: 0.06 g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL ES1D-T ES1G-T Marking code on the device ES1D ES1G Repetitive peak reverse voltage Reverse voltage, total rms value Maximum DC blocking voltage Forward current Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode) VRRM VR(RMS) VDC IF(AV) IFSM 200 140 200 400 280 400 1 30 Junction temperature Storage temperature TJ TSTG - 55 to +150 - 55 to +150 ES1J-T ES1J 600 420 600 UNIT V V V A A °C °C 1 Version:C1.


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