ESJA57-06A 5.0mA 6.0kV 80nS
Fast Recovery High Voltage Silicon Rectifier Diode
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ESJA57-06A 5.0mA 6.0kV 80nS
Fast Recovery High
Voltage Silicon Rectifier Diode
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INTRODUCE:
SHAPE DISPLAY:
HVGT high
voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. Fast recovery.
2. High reliability design.
3. Low current, high
voltage.
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-205
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Air purification, negative ions.
2. Electrostatic
voltage doubling circuit.
3. Copier and X-ray.
4. Other high
voltage rectifier circuits.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 0.15 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse
Voltage
VRRM
TA=25°C
Non-Repetitive Peak Renerse
Voltage
VRSM
TA=25°C
Average Forward Current Maximum
IFAVM
TA=25°C TOIL=55°C
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
Junction Temperature
TJ
Allowable Operation Case Temperature
Tc
Storage Temperature
TSTG
ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified)
Items
Symbols
Condi...
