ESJC13-12B 350mA 12kV --nS
High Voltage Microwave Oven Rectifiers Diodes
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ESJC13-12B 350mA 12kV --nS
High
Voltage Microwave Oven Rectifiers Diodes
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INTRODUCE:
SHAPE DISPLAY:
HVGT high
voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. Low VF.
2. High reliability.
3. High Surge proof resistivity.
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-722B
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. High
voltage power supply rectifier.
2. High
voltage rectifier circuit for microwave
oven.
3. Other.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 2.90 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse
Voltage
VRRM
TA=25°C
12 kV
Average Forward Current Maximum
IO
TA=60°C
350 mA
Non-repetitive Peak Rorward Current Non-repetitive Peak Forward Current
IRSM
TA=25°C; Wp=1mS.Rectangular-wave. One-shot
IFSM
TA=25°C; 50HzSine half-wave peak value.One-shot.
100 30
mA A
Junction Temperature
TJ
130 °C
Allowable Operation Case Temperature
Tc
-40~+130
°C
Storage Temperature ELECTRICAL CHARACTERISTICS:
Items
TSTG
TA=25°C (Unless Otherwise Specified...
