ESJC60S25
300mA 25kV --nS
High Voltage Silicon Rectifier Diode
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ESJC60S25
300mA 25kV --nS
High
Voltage Silicon Rectifier Diode
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INTRODUCE:
SHAPE DISPLAY:
HVGT high
voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. High overload surge capability.
2. Avalanche Characteristic.
3. Medium Current, Low Forward
Voltage
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-721
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Rectifier for high
voltage power supply.
2. General purpose high
voltage rectifier.
3. Beauty equipment.
4. Other.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 2.10 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse
Voltage Non-Repetitive Peak Renerse
Voltage
VRRM VRSM
TA=25°C TA=25°C
25 kV -- kV
Average Forward Current Maximum
IFAVM
TA=40°C TOIL=55°C
300 mA -- mA
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
30
A
Junction Temperature
TJ
150 °C
Allowable Operation Case Temperature
Tc
-40~+150
°C
Storage Temperature ELECTRICAL CHARACTERISTICS:
Items
TSTG
TA=25°C (Unl...