Features
■ RDS(on) (Max 0.26 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100...
Features
■ RDS(on) (Max 0.26 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C)
ET-20N50
N-Channel
MOSFET
Symbol 1. Gate{
{ 2. Drain
●
◀▲
● ●
{ 3. Source
General Description
This Power
MOSFET is manufactured advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-247
G DS
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ TL
Parameter Drain to Source
Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed
Gate to Source
Voltage
Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recov...
