MODULE. ETG81-050 Datasheet

ETG81-050 Datasheet PDF

Part ETG81-050
Description POWER TRANSISTOR MODULE
Feature ETG81-050 (30A) FUJI POWER TRANSISTOR MODULE Features Including Free Wheeling Diode High DC Curren.
Manufacture Fuji
Datasheet
Download ETG81-050 Datasheet





ETG81-050
ETG81-050 (30A)
FUJI POWER TRANSISTOR MODULE
Features
Including Free Wheeling Diode
High DC Current Gain
Insulated Type
Applications
High Power Switching
AC Motor Controls
DC Motor Controls
Uninterruptible Power Supply
Outline Drawings
: Maximum ratings and characteristic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
DC
1ms
DC
VCBO
VCEO
VCEO(SUS)
VEBO
IC
ICP
-Ic
600
600
450
6
30
60
30
V
V
V
V
A
A
A
DC
1ms
one Transistor
AC.1min
IB
IBP
PC
Tj
Tstg
m
Viso
Mounting *1
Terminal *2
2
4
200
+150
-40 to +125
100
2000
3.5
1.7
A
A
W
°C
°C
g
V
Nm
Nm
Equivalent Circuit Schematic
Item
Item
Electrical characteristics (Tc =25°C unless otherwise specified)
Symbol
VCBO
VCEO
VCEO(SUS)
VCEX(SUS)
VEBO
ICBO
IEBO
-VCE
hFE
VCE(Sat)
VBE(Sat)
ton
tstg
tf
trr
Test Conditions
ICBO = 1mA
ICEO = 1mA
IC = 1A
IC = 60A, -IB = 2A
IEBO = 200mA
VCBO = 600V
VEBO = 6V
Ic = -30A
IC = 30A, VCE = 5V
IC = 30A, IB = 0.6A
IC = 30A, PW=50µs, Duty<=2%
IB1 = +0.6A, IB2 = -0.6A
RL = 10Ω, Vcc = 300V
-Ic = 30A, VBE = -6V, -di/dt = 50A/µs
Thermal characteristics
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
Transistor
Fast Recovery Diode
Between case and cooling fin
Min.
600
600
450
500
6
Typ.
-
100
Max.
1.0
150
1.5
2.0
2.5
3.0
12.0
4.0
0.6
Units
V
V
V
V
V
mA
mA
V
-
V
V
µs
µs
µs
Min.
Typ.
0.05
Max.
0.62
1.6
Units
°C/W
°C/W
°C/W
1



ETG81-050
ETG81-050 (30A)
Characteristics
FUJI POWER TRANSISTOR MODULE
Collector Output Characteristics
DC Current Gain
DC Current Gain
Base and Collector Saturation Voltage
Safe Operating Area
Safe Operating Area
2




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