F0118G Datasheet (data sheet) PDF





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F0118G Datasheet - GaAs Infrared Emitting Diode

F0118G   F0118G  

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GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary Data W esentliche Merkmale • Typ. Gesamtleis tung: 24 mW @ 100 mA im TOPLED® Gehäu se • Chipgröße 300 x 300 µm2 • E missionswellenlänge: 950 nm • GaAs-L ED mit sehr hohem Wirkungsgrad • Gute Linearität (Ie = f [IF]) bei hohen Strömen •

Manufacture Part Number Description

OSRAM

F0118G

GaAs Infrared Emitting Diode




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