F0118J Datasheet (data sheet) PDF





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F0118J Datasheet - GaAs Infrared Emitting Diode

F0118J   F0118J  

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GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emi tting Diode(950 nm, 12 mil) F 0118J Vo rläufige Daten / Preliminary data Wese ntliche Merkmale • Typ. Gesamtleistun g: 22 mW @ 100 mA im Topled® Gehäuse. • Chipgröße 300 x 300 µm2 • GaA lAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Hohe Impulsb elastbarkeit • Gute spektrale Anpassung an Si-F

Manufacture Part Number Description

OSRAM

F0118J

GaAs Infrared Emitting Diode




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