F08H60S

FFPF08H60S — Hyperfast II Diode November 2014 FFPF08H60S 8 A, 600 V, Hyperfast II Diode Features Hyperfast Recovery trr = 45 ns (@ IF = 8 A) Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) 600 V Reverse Voltage and High Reliability Avalanche Energy Rated RoHS Compliant Applications General Purpose Switching Mode Power Supply Free-Wheeling Diode for Motor Application Power Switching Circuits Description The FFPF08H60S is a hyperfast II diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Pin Assignments TO-220F-2L 1. Cathode 2. Anode 1 1. Cathode 2 2. Anode Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave @ TC = 105 °C Operating Junction and Storage Temperature Ratings 600 600 600 8 60 - 65 to +175 Unit V V V A A °C Thermal Characteristics TC = 25°C unless otherwise...