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F1066 Datasheet

Part Number F1066
Manufacturers Polyfet RF Devices
Logo Polyfet RF Devices
Description RF POWER VDMOS TRANSISTOR
Datasheet F1066 DatasheetF1066 Datasheet (PDF)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1066 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 100 Watts Push - Pull Pack.

  F1066   F1066






Part Number F1069
Manufacturers Polyfet RF Devices
Logo Polyfet RF Devices
Description RF POWER VDMOS TRANSISTOR
Datasheet F1066 DatasheetF1069 Datasheet (PDF)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1069 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Single Ended Pack.

  F1066   F1066







Part Number F1065
Manufacturers Polyfet RF Devices
Logo Polyfet RF Devices
Description RF POWER VDMOS TRANSISTOR
Datasheet F1066 DatasheetF1065 Datasheet (PDF)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1065 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 120 Watts Gemini Package S.

  F1066   F1066







Part Number F1063
Manufacturers Polyfet RF Devices
Logo Polyfet RF Devices
Description RF POWER VDMOS TRANSISTOR
Datasheet F1066 DatasheetF1063 Datasheet (PDF)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1063 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Single Ended Pack.

  F1066   F1066







Part Number F1060CT
Manufacturers Tasund
Logo Tasund
Description Schottky Barrier Rectifiers
Datasheet F1066 DatasheetF1060CT Datasheet (PDF)

Production specification Schottky Barrier Rectifiers FEATURES z STSD F1030CT---STSD F1060CT Metal-Semiconductor Junction with Guard Ring. z Epit axial Construction. z Pb Lead-free Low Forward Voltage Drop,Low Switching Losses. Surge Capability. z High z For use in low voltage,high frequency Inverters,free wheeling,and polarity protecttion applications. z The Plastic Material Carries U/L Recognition 94V-0. ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise sp.

  F1066   F1066







RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1066 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 100 Watts Push - Pull Package Style AD HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 290 Watts Junction to Case Thermal Resistance 0.6 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o -65 o C to 150o C 16 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 10 60 TYP 100WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz η VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc.


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