FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
SuperFET
FCP11N60F/FCPF11N60F
600V N-Channel MOSFET
Features
• 650V @TJ = 15...
FCP11N60F/FCPF11N60F 600V N-Channel
MOSFET
SuperFET
FCP11N60F/FCPF11N60F
600V N-Channel
MOSFET
Features
650V @TJ = 150°C Typ. RDS(on) = 0.32Ω Fast Recovery Type ( trr = 120ns) Ultra Low Gate Charge (typ. Qg = 40nC) Low Effective Output Capacitance (typ. Cosseff.=95pF) 100% avalanche tested
TM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
D
!
"
G! G DS
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TO-220
GD S
TO-220F
!
S
Absolute Maximum Ratings
Symbol
ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FCP11N60F
11 7 33 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
FCPF11N60F
11 * 7* 33 *
Units
A A A V
Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
340 11 12....