FQPF12N60C — N-Channel QFET® MOSFET
November 2013
FQPF12N60C
N-Channel QFET® MOSFET
600 V, 12 A, 650 mΩ
Description
T...
FQPF12N60C — N-Channel QFET®
MOSFET
November 2013
FQPF12N60C
N-Channel QFET®
MOSFET
600 V, 12 A, 650 mΩ
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Features
12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A
Low Gate Charge (Typ. 48 nC) Low Crss (Typ. 21 pF) 100% Avalanche Tested
D
GDS TO-220F
G S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS ID
IDM
Drain-Source
Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
VGSS EAS IAR EAR dv/dt
Gate-Source
voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
(Note 2) (Note 1) (Note 1) (Note 3)
PD Power Dissipation (TC = 25°C) - Derate above 25°C
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Res...