FC8V3303

This product complies with the RoHS Directive (EU 2002/95/EC). FC8V3303 Silicon N-channel MOS FET For DC-DC converter circuits  Overview FC8V3303 is the N-channel dual type MOSFET which is the most suitable for DC-DC converter circuits.  Features  N-channel dual type  Low drain-source ON resistance: RDS(on) typ. = 15 mW (VGS = 10 V)  Small size surface mounting package: WMini8-F1 (2.9 mm × 2.8 mm × 0.8 mm)  Contributes to miniaturization of sets, mount area reduction  Eco-friendly Halogen-free package  Packaging FC8V33030L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current *1 t = 10 s VDSS VGSS ID 33 ±20 6.5 8 V V A Peak drain current *1, 2 Souce current (Body diode) Power dissipation *1 t = 10 s IDP IS (BD) PD 26 6.5 1 1.5 A A W Channel temperature Tch 150 °C Storage tempe...