MOSFET. FCH041N60E Datasheet

FCH041N60E Datasheet PDF

Part FCH041N60E
Description MOSFET
Feature FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCH041N60E N-Channel SuperFET® II Easy-Drive .
Manufacture Fairchild Semiconductor
Datasheet
Download FCH041N60E Datasheet

FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCH04 FCH041N60E Datasheet





FCH041N60E
FCH041N60E
N-Channel SuperFET® II Easy-Drive MOSFET
600 V, 77 A, 41 mΩ
December 2014
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 36 mΩ
• Ultra Low Gate Charge (Typ. Qg = 285 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 735 pF)
• 100% Avalanche Tested
• An Integrated Gate Resistor
• RoHS Compliant
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET easy-drive series offers slightly slower
rise and fall times compared to the SuperFET II MOSFET
series. Noted by the "E" part number suffix, this family helps
manage EMI issues and allows for easier design implementa-
tion. For faster switching in applications where switching losses
must be at an absolute minimum, please consider the Super-
FET II MOSFET series.
D
G
D
S
TO-247
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
S
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2013 Fairchild Semiconductor Corporation
FCH041N60E Rev. C2
1
FCH041N60E
600
±20
±30
77
48.7
231
2025
15
5.92
100
20
592
4.74
-55 to +150
300
FCH041N60E
0.21
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
www.fairchildsemi.com



FCH041N60E
Package Marking and Ordering Information
Part Number
FCH041N60E
Top Mark
FCH041N60E
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ID = 10 mA, VGS = 0 V, TC = 25oC
ID = 10 mA, VGS = 0 V, TC = 150oC
ID = 10 mA, Referenced to 25oC
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 39 A
VDS = 20 V, ID = 39 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Cosseff.
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 380 V, ID = 39 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
tf Turn-Off Fall Time
VDD = 380 V, ID = 39 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 39 A
trr
Qrr
Notes:
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, ISD = 39 A,
dIF/dt = 100 A/μs
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 15 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 39 A, di/dt 200 A/μs, VDD 380V, starting TJ = 25°C.
4. Essentially independent of operating temperature.
Min. Typ. Max. Unit
600 -
650 -
-
-
V
- 0.67 - V/oC
-
-
-
9.7
1
-
μA
- - ±100 nA
2.5 - 3.5 V
- 36 41 mΩ
- 71 -
S
- 10300 13700 pF
-
355 475
pF
- 4 6 pF
- 187 -
pF
- 735 -
pF
-
285 380
nC
- 45 - nC
- 105 - nC
- 1.2 -
Ω
- 50 110 ns
- 50 110 ns
-
320 650
ns
- 85 180 ns
- - 77 A
- - 231 A
- - 1.2 V
- 590 -
ns
- 18 - μC
©2013 Fairchild Semiconductor Corporation
FCH041N60E Rev. C2
2
www.fairchildsemi.com




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