FCH104N60F-F085

FCH104N60F-F085 N-Channel SuperFET, 600V, 37A, 104mohm FCH104N60F-F085 N-Channel SuperFET II FRFET MOSFET 600 V, 37 A, 104 mΩ Features „ Typical RDS(on) = 91 mΩ at VGS = 10 V, ID = 18.5 A „ Typical Qg(tot) = 109 nC at VGS = 10V, ID = 18.5 A „ UIS Capability „ Qualified to AEC Q101 „ RoHS Compliant Description SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. Maximum Ratings TC = 25°C unless otherwise noted G D S G TO-247 Application „ Automotive On Board Charger „ Automotive DC/DC converter for HEV Symbol Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage ID Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current TC = 25°C TC = 100°C EAS dv/dt Single Pulse Avalanche Rating MOSFET dv/dt Peak Diode Recovery dv/dt (Note 2) (Note 3) PD Power Dissipation Derate Above 25oC TJ, TSTG RθJC RθJA Operating and...