MOSFET. FCH76N60N Datasheet

FCH76N60N Datasheet PDF

Part FCH76N60N
Description MOSFET
Feature FCH76N60N — N-Channel SupreMOS® MOSFET FCH76N60N N-Channel SupreMOS® MOSFET 600 V, 76 A, 36 mΩ Nov.
Manufacture Fairchild Semiconductor
Datasheet
Download FCH76N60N Datasheet

FCH76N60N — N-Channel SupreMOS® MOSFET FCH76N60N N-Channel FCH76N60N Datasheet
FCH76N60NF — N-Channel SupreMOS® FRFET® MOSFET FCH76N60NF N FCH76N60NF Datasheet





FCH76N60N
FCH76N60N
N-Channel SupreMOS® MOSFET
600 V, 76 A, 36 mΩ
November 2013
Features
• RDS(on) = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A
• Ultra Low Gate Charge (Typ. Qg = 218 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• Solar Inverter
• AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
D
G
D
S
TO-247
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCH76N60N
600
±30
76
48.1
228
8022
25.3
5.43
100
20
543
4.34
-55 to +150
300
FCH76N60N
0.23
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FCH76N60N Rev. C3
1
www.fairchildsemi.com



FCH76N60N
Package Marking and Ordering Information
Part Number
FCH76N60N
Top Mark
FCH76N60N
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 480 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TC = 125oC
VGS = ±30 V, VDS = 0 V
600
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 38 A
VDS = 20 V, ID = 38 A
2.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
VDS = 100 V, VGS = 0V
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 380 V, VGS = 0 V
VDS = 380 V, ID = 38 A,
VGS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
Typ. Max. Units
-
0.73
-
-
-
-
-
10
100
±100
V
V/oC
μA
nA
- 4.0 V
28 36 mΩ
90 - S
9310
370
3.1
195
914
218
39
66
1.0
12385
495
5
-
-
285
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 38 A,
RG = 25 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 38 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 38 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 25.3 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 76 A, di/dt 200 A/μs, VDD 380 V, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
34 78 ns
24 58 ns
235 480 ns
32 74 ns
- 76 A
- 228 A
- 1.2 V
612 - ns
16 - μC
©2011 Fairchild Semiconductor Corporation
FCH76N60N Rev. C3
2
www.fairchildsemi.com




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