( DataSheet : www.DataSheet4U.com )
FCI7N60 600V N-Channel MOSFET
July 2005
SuperFET
FCI7N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C • Typ. RDS(on) = 0.53Ω • Ultra Low Gate Charge (typ. Qg = 25nC) • Low Effective Output Capacitance (typ. Cosseff. = 60pF) • 100% Avalanche Tested
TM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate ch.
600V N-Channel MOSFET
( DataSheet : www.DataSheet4U.com )
FCI7N60 600V N-Channel MOSFET
July 2005
SuperFET
FCI7N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C • Typ. RDS(on) = 0.53Ω • Ultra Low Gate Charge (typ. Qg = 25nC) • Low Effective Output Capacitance (typ. Cosseff. = 60pF) • 100% Avalanche Tested
TM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
D
{
z
G{ G D S
z z
{
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FCI7N60
600 7 4.4 21 ± 30 230 7 8.3 4.5 83 0.67 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/°C °C °C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” f.