FCP165N60E — N-Channel SuperFET® II Easy-Drive MOSFET
FCP165N60E
N-Channel SuperFET® II Easy-Drive MOSFET
600 V, 23 A, ...
FCP165N60E — N-Channel SuperFET® II Easy-Drive
MOSFET
FCP165N60E
N-Channel SuperFET® II Easy-Drive
MOSFET
600 V, 23 A, 165 mΩ
December 2015
Features
650 V @TJ = 150°C Typ. RDS(on) = 132 mΩ Ultra Low Gate Charge (Typ. Qg = 57 nC) Low Effective Output Capacitance (Typ. Coss(eff) = 204 pF) 100% Avalanche Tested
RoHS Compliant
Applications
Telecom / Sever Power Supplies Industrial Power Supplies
Description
SuperFET® II
MOSFET is Fairchild Semiconductor’s brand-new high
voltage super-junction (SJ)
MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II
MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II
MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II
MOSFET series.
D
GDS TO-220
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID IDM EAS IAR EAR dv/dt
PD
Parameter
Drain to Source
Voltage
Gate to Source
Voltage
Drain Current Drain Current
- DC
- AC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
Single Pulsed Avalanche Energy
Aval...