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FCPF11N60F Datasheet

Part Number FCPF11N60F
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 600V N-Channel MOSFET
Datasheet FCPF11N60F DatasheetFCPF11N60F Datasheet (PDF)

FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET FCPF11N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 11 A, 380 mΩ November 2013 Features • 600 V @ TJ = 150°C • Typ. RDS(on) = 320 mΩ • Fast Recovery Type (trr = 120 ns) • Ultra Low Gate Charge (Typ. Qg = 40 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) • 100% Avalanche Tested • RoHS compliant Applications • LCD/LED/PDP TV • Lighting • Solar Inverter • AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semiconducto.

  FCPF11N60F   FCPF11N60F






Part Number FCPF11N60T
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description SuperFET
Datasheet FCPF11N60F DatasheetFCPF11N60T Datasheet (PDF)

FCP11N60 / FCPF11N60 / FCPF11N60T SuperFET TM FCP11N60 / FCPF11N60 / FCPF11N60T General Description SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low onresistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, Sup.

  FCPF11N60F   FCPF11N60F







Part Number FCPF11N60NT
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet FCPF11N60F DatasheetFCPF11N60NT Datasheet (PDF)

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ 10.8 T.

  FCPF11N60F   FCPF11N60F







Part Number FCPF11N60NT
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FCPF11N60F DatasheetFCPF11N60NT Datasheet (PDF)

FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET FCP11N60N / FCPF11N60NT N-Channel SupreMOS® MOSFET 600 V, 10.8 A, 299 mΩ November 2013 Features • RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A • Ultra Low Gate Charge (Typ. Qg = 27.4 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PDP TV • Lighting • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next gene.

  FCPF11N60F   FCPF11N60F







Part Number FCPF11N60
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description SuperFET MOSFET
Datasheet FCPF11N60F DatasheetFCPF11N60 Datasheet (PDF)

FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET i.

  FCPF11N60F   FCPF11N60F







600V N-Channel MOSFET

FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET FCPF11N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 11 A, 380 mΩ November 2013 Features • 600 V @ TJ = 150°C • Typ. RDS(on) = 320 mΩ • Fast Recovery Type (trr = 120 ns) • Ultra Low Gate Charge (Typ. Qg = 40 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) • 100% Avalanche Tested • RoHS compliant Applications • LCD/LED/PDP TV • Lighting • Solar Inverter • AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. D GDS G TO-220F MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Dio.


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