FCPF11N60T

FCP11N60 / FCPF11N60 / FCPF11N60T SuperFET TM FCP11N60 / FCPF11N60 / FCPF11N60T General Description SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low onresistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. November 2009 Features 650V @ Tj = 150°C Typ. Rds(on) = 0.32Ω Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff = 95pF) 100% avalanche tested RoHS Compliant D { ● ◀ G D S TO-220AB FCP Series G{ GD S ▲ ● ● TO-220F FCPF Series { S Absolute Maximum Ratings Symbol ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current TC = 25°C unless otherwise noted Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FCP11N60 11 7 33 FCPF11N60(T) 11* 7* 33* ± 30 340 11 12.5 4.5 Units A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 2) (Note 1) (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range M...