FCPF1300N80Z

isc N-Channel MOSFET Transistor FCPF1300N80Z ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 1.3Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·AC - DC Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 12 PD Total Dissipation @TC=25℃ 24 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 5.2 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor FCPF1300N80Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 800 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 250μA 2.5 4.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=2A 1.3 Ω IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ±10 μA VDS=800V; VGS= 0V IDSS Drain-Source Leakage Current VDS=640V; VGS= 0V;TC=125℃ 25 μA 250 VSD Diode forward on voltage ISD =4A, VGS = 0 V 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein i...