FCPF13N60NT

FCP13N60N / FCPF13N60NT N-Channel MOSFET FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258Ω Features RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A Ultra Low Gate Charge ( Typ.Qg = 30.4nC) Low Effective Output Capacitance 100% Avalanche Tested RoHS Compliant TM SupreMOS August 2009 Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G D S TO-220 FCP Series GD S TO-220F FCPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage -Continuous (TC = 25oC) - Pulsed FCP13N60N FCPF13N60NT 600 ±30 13 8.2 (Note 1) (Note 2) 39 235 4.3 1.16 100 (Note 3) - Derate above 25oC (TC = 25oC) 116 0.93 300 20 33.8 0.27 -55 to +150 13* 8.2* 39 -Continuous (TC = 100oC) Units V V A A mJ A mJ V/ns V/ns W W/oC o o Gate to Source Voltage VGSS www.DataSheet4U.com Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power D...