FCPF190N60

MOSFET – N-Channel, SUPERFET) II 600 V, 20.2 A, 199 mW FCPF190N60-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II FAST MOSFET series helps minimize various power systems and improve system efficiency. Features 650 V @ TJ = 150°C Typ. RDS(on) = 170 mW Ultra Low Gate Charge (Typ. Qg = 57 nC) Low Effective Output Capacitance (Typ. Coss.eff = 160 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter www.onsemi.com VDSS 600 V RDS(ON) MAX 199 mW @ 10 V ID MAX 20.2 A D G S MOSFET GDS TO−220F Ultra Narrow Lead CASE 221BN MARKING DIAGRAM $Y&Z&3&K FCPF 190N60 © Semiconductor Components Industries, LLC, 2020 December, 2020 − Rev. 0 $Y &Z &3 &K FCPF190N60 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FCPF190N60−F154/D FCPF190N60−F154 ABSOLUTE MAXIMUM RATINGS (TC ...