FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET
August 2014
FCP20N60 / FCPF20N60
N-Channel SuperFET® MOSFET
600 V, 2...
FCP20N60 / FCPF20N60 — N-Channel SuperFET®
MOSFET
August 2014
FCP20N60 / FCPF20N60
N-Channel SuperFET®
MOSFET
600 V, 20 A, 190 mΩ
Features
650V @ TJ = 150°C Typ. RDS(on) = 150 mΩ Ultra Low Gate Charge (Typ. Qg = 75 nC ) Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) 100% Avalanche Tested
Applications
Solar Inverter AC-DC Power Supply
Description
SuperFET®
MOSFET is Fairchild Semiconductor’s first generation of high
voltage super-junction (SJ)
MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET
MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
D
GDS
TO-220
GDS
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
IDM
Drain-Source
Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
VGSS EAS IAR EAR dv/dt
Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C) - Derate Above 25°C
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Therma...