FCPF20N60

FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET August 2014 FCP20N60 / FCPF20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features 650V @ TJ = 150°C Typ. RDS(on) = 150 mΩ Ultra Low Gate Charge (Typ. Qg = 75 nC ) Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) 100% Avalanche Tested Applications Solar Inverter AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D GDS TO-220 GDS Absolute Maximum Ratings Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed VGSS EAS IAR EAR dv/dt Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25°C) - Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature. Therma...