isc N-Channel MOSFET Transistor
FCPF250N65S3
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 250mΩ@10V ·Fast Switchi...
isc N-Channel
MOSFET Transistor
FCPF250N65S3
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 250mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High fast switching Power Supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
650
VGS
Gate-Source
Voltage
±30
ID
Drain Current-Continuous
12
IDM
Drain Current-Single Pulsed
30
PD
Total Dissipation @TC=25℃
31
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 4.03
UNIT ℃/W
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isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= 250μA
VGS(th)
Gate Threshold
Voltage
VDS= VGS; ID= 250μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID= 6A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 650V; VGS= 0V
VSD
Diode forward on
voltage
ISD =6A, VGS = 0 V
FCPF250N65S3
MIN TYP MAX UNIT
650
V
2.5
4.5
V
250 mΩ
±100 nA
1
μA
1.2
V
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