DatasheetsPDF.com

FCPF380N60 Datasheet

Part Number FCPF380N60
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet FCPF380N60 DatasheetFCPF380N60 Datasheet (PDF)

MOSFET – N-Channel, SUPERFET) II 600 V, 10.2 A, 380 mW FCPF380N60-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II FAST MOSFET series he.

  FCPF380N60   FCPF380N60






Part Number FCPF380N60
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet FCPF380N60 DatasheetFCPF380N60 Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCPF380N60 ·FEATURES ·With TO-220F packaging ·Low switching loss ·Ultra low gate charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Conti.

  FCPF380N60   FCPF380N60







Part Number FCPF380N60
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FCPF380N60 DatasheetFCPF380N60 Datasheet (PDF)

FCP380N60 / FCPF380N60 N-Channel MOSFET March 2013 FCP380N60 / FCPF380N60 N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) = 380 mΩ • Ultra low gate charge (typ. Qg = 30 nC) • Low effective output capacitance (typ. Coss.eff = 95 pF) • 100% avalanche tested Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low o.

  FCPF380N60   FCPF380N60







N-Channel MOSFET

MOSFET – N-Channel, SUPERFET) II 600 V, 10.2 A, 380 mW FCPF380N60-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II FAST MOSFET series helps minimize various power systems and improve system efficiency. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 330 mW • Ultra Low Gate Charge (Typ. Qg = 30 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Computing / Display Power Supplies • Telecom / Server Power Supplies • Industrial Power Supplies • Lighting / Charger / Adapter www.onsemi.com VDSS 600 V RDS(ON) MAX 380 mW @ 10 V ID MAX 10.2 A D G S MOSFET GDS TO−220F Ultra Narrow Lead CASE 221BN MARKING DIAGRAM $Y&Z&3&K FCPF 380N60 © Semiconductor Components Industries, LLC, 2020 December, 2020 − Rev. 0 $Y &Z &3 &K FCPF380N60 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FCPF380N60−F154/D FCPF380N60−F154 ABSOLUTE MAXIMUM RATINGS (TC.


2021-04-25 : FCPF190N60    FCPF190N60-F154    2N2222    4435    EFC2K102ANUZ    HLMP-EG15-PS000    HLMP-EG15-QT000    HLMP-EG15-QT0DD    HLMP-EG15-RU000    HLMP-EG15-SV000   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)