isc N-Channel MOSFET Transistor
FCPF400N60
·FEATURES ·With TO-220F packaging ·Drain Source Voltage-
: VDSS ≥ 600V ·Sta...
isc N-Channel
MOSFET Transistor
FCPF400N60
·FEATURES ·With TO-220F packaging ·Drain Source
Voltage-
: VDSS ≥ 600V ·Static drain-source on-resistance:
RDS(on) ≤ 400mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
600
V
VGSS
Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous;@Tc=25℃
10
A
IDM
Drain Current-Single Pulsed
30
A
PD
Total Dissipation
31
W
Tj
Operating Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX UNIT
4
℃/W
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isc N-Channel
MOSFET Transistor
FCPF400N60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= 250uA
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID=250uA
600
V
2.5
3.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=5A
400
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward
voltage
VGS=±20V;VDS= 0V
VDS= 480V; VGS= 0V VDS= 480V; VGS= 0V;TJ=125℃
ISD= 5A, VGS = 0 V
±100 nA
1 10
μA
1.2
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any ...
