MOSFET – N-Channel, SUPERFET) II
600 V, 7.4 A, 600 mW
FCPF600N60ZL1-F154
Description SUPERFET II MOSFET is ON Semiconduc...
MOSFET – N-Channel, SUPERFET) II
600 V, 7.4 A, 600 mW
FCPF600N60ZL1-F154
Description SUPERFET II
MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ)
MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II FAST
MOSFET series helps minimize various power systems and improve system efficiency.
Features
650 V @ TJ = 150°C Typ. RDS(on) = 510 mW Ultra Low Gate Charge (Typ. Qg = 20 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF) 100% Avalanche Tested ESD Improved Capacity These Devices are Pb−Free and are RoHS Compliant
Applications
Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter
www.onsemi.com
VDSS 600 V
RDS(ON) MAX 600 mW @ 10 V
ID MAX 7.4 A
D
G
S
MOSFET
GDS TO−220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K FCPF 600N60Z
© Semiconductor Components Industries, LLC, 2020
December, 2020 − Rev. 0
$Y &Z &3 &K FCPF600N60Z
= ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
1
Publication Order Number:
FCPF600N60ZL1−F154/D
FCPF600N60ZL1−F...