PowerTrench MOSFET. FDB045AN08_F085 Datasheet

FDB045AN08_F085 Datasheet PDF


Part Number

FDB045AN08_F085

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 12 Pages
PDF Download
Download FDB045AN08_F085 Datasheet PDF


FDB045AN08_F085
FDB045AN08A0_F085
N-Channel PowerTrench® MOSFET
75V, 80A, 4.5m:
Features
• rDS(ON) = 3.9m: (Typ.), VGS = 10V, ID = 80A
• Qg(tot) = 92nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
• RoHS Compliant
Formerly developmental type 82684
June 2010
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
GATE
D
SOURCE
TO-263AB
DRAIN
(FLANGE)
FDB SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
ID
Continuous (TC < 137oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RTJA = 43oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
Power dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
G
S
Ratings
75
r20
90
19
Figure 4
600
310
2.0
-55 to 175
Units
V
V
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RTJC
RTJA
RTJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
0.48
62
43
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2010 Fairchild Semiconductor Corporation
FDB045AN08A0_F085 Rev. A
www.fairchildsemi.com

FDB045AN08_F085
Package Marking and Ordering Information
Device Marking
FDB045AN08A0
Device
FDB045AN08A0_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250PA, VGS = 0V
VDS = 60V
VGS = 0V
TC = 150oC
VGS = r20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250PA
ID = 80A, VGS = 10V
ID = 37A, VGS = 6V
ID = 80A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 40V
ID = 80A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
Turn-On Delay Time
tr Rise Time
td(OFF)
Turn-Off Delay Time
tf Fall Time
tOFF Turn-Off Time
VDD = 40V, ID = 80A
VGS = 10V, RGS = 3.3:
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
QRR Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 0.48mH, IAS = 50A.
2: Pulse Width = 100s
ISD = 80A
ISD = 40A
ISD = 75A, dISD/dt = 100A/Ps
ISD = 75A, dISD/dt = 100A/Ps
Min Typ Max Units
75 - - V
- -1
PA
- - 250
- - r100 nA
2 - 4V
- 0.0039 0.0045
- 0.0056 0.0084 :
- 0.008 0.011
- 6600 -
pF
- 1000 -
pF
- 240 -
pF
92 138 nC
- 11 17 nC
- 27 - nC
- 16 - nC
- 21 - nC
- - 160 ns
- 18 - ns
- 88 - ns
- 40 - ns
- 45 - ns
- - 128 ns
- - 1.25 V
- - 1.0 V
- - 53 ns
- - 54 nC
FDB045AN08A0_F085 Rev. A
www.fairchildsemi.com


Features FDB045AN08A0_F085 N-Channel PowerTrench MOSFET FDB045AN08A0_F085 N-Channel P owerTrench® MOSFET 75V, 80A, 4.5m: Fea tures • rDS(ON) = 3.9m: (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ. ), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability ( Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Complian t Formerly developmental type 82684 Ju ne 2010 Applications • 42V Automotive Load Control • Starter / Alternator Systems • Electronic Power Steering S ystems • Electronic Valve Train Syste ms • DC-DC converters and Off-line UP S • Distributed Power Architectures a nd VRMs • Primary Switch for 24V and 48V systems GATE D SOURCE TO-263AB DRAIN (FLANGE) FDB SERIES MOSFET Maxi mum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS Dr ain to Source Voltage Gate to Source Vo ltage Drain Current ID Continuous (T C < 137oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RTJA = 43oC/W) Pulsed EAS Single Puls.
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