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FDB3632 Datasheet

Part Number FDB3632
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDB3632 DatasheetFDB3632 Datasheet (PDF)

FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82784 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High V.

  FDB3632   FDB3632






Part Number FDB3632
Manufacturers Kexin
Logo Kexin
Description N-Channel MOSFET
Datasheet FDB3632 DatasheetFDB3632 Datasheet (PDF)

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB3632(FDB3632) Features rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A Qg(tot) = 84nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 +0.22.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings .

  FDB3632   FDB3632







Part Number FDB3632
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet FDB3632 DatasheetFDB3632 Datasheet (PDF)

MOSFET – Power, N-Channel, POWERTRENCH) 100 V, 80 A, 9 mW FDH3632, FDP3632, FDB3632 Features • RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A • Qg (tot) = 84 nC (Typ.), VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • These Devices are Pb−Free and are RoHS Compliant Applications • Synchronous Rectification • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter www.onsemi.com VDSS 100 V RD.

  FDB3632   FDB3632







Part Number FDB3632
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet FDB3632 DatasheetFDB3632 Datasheet (PDF)

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263 packaging ·Drain Source Voltage- : VDSS ≥100V ·Static drain-source on-resistance: RDS(on) ≤ 9mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 80 .

  FDB3632   FDB3632







N-Channel MOSFET

FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82784 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection Systems • 42V Automotive Load Control • Electronic Valve Train Systems D DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE GATE DRAIN (FLANGE) SOURCE DRAIN GATE G TO-220AB FDP SERIES TO-263AB FDB SERIES DRAIN (FLANGE) TO-262AB FDI SERIES S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC < 111oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, R θJA = 43oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 80 12 Figure 4 393 310 2.07 -55 to 175 A A A mJ W W/oC o Ratings 100 ±20 Units V V C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-220, TO-263, TO-262 Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 2 0.4.


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