FDB8443-F085 N-Channel PowerTrench® MOSFET
FDB8443-F085
N-Channel PowerTrench® MOSFET
40V, 80A, 3.0mΩ
Features
Typ r...
FDB8443-F085 N-Channel PowerTrench®
MOSFET
FDB8443-F085
N-Channel PowerTrench®
MOSFET
40V, 80A, 3.0mΩ
Features
Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 142nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant
Applications
Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter / Alternator Distributed Power Architecture and VRMs Primary Switch for 12V Systems
©2011 Semiconductor Components Industries, LLC. September-2017, Rev. 3
Publication Order Number: FDB8443-F085/D
FDB8443-F085 N-Channel PowerTrench®
MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
Drain to Source
Voltage
Gate to Source
Voltage Drain Current Continuous (TC < 146oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed
EAS Single Pulse Avalanche Energy
PD
Power Dissipation Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
(Note 1)
Ratings 40 ±20 80 25
See Figure 4 531 188 1.25
-55 to +175
Units V V
A
mJ W W/oC oC
RθJC RθJA RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
(Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
0.8 62 43
oC/W oC/W oC/W
Package Marking and Ordering Information
Device Marking FDB8443
Device FDB8443-F085
Package TO-2...