FDB8444-F085

FDB8444-F085 N-Channel PowerTrench® MOSFET MPLEMENTATION FDB8444-F085 N-Channel PowerTrench® MOSFET 40V, 70A, 5.5mΩ Features „ Typ rDS(on) = 3.9mΩ at VGS = 10V, ID = 70A „ Typ Qg(TOT) = 91nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Transmission „ Distributed Power Architecture and VRMs „ Primary Switch for 12V Systems „ RoHS Compliant AD FREE I LE GATE SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) D G S ©2010Semiconductor Components Industries, LLC. September-2017,Rev 3 Publication Order Number: FDB8444-F085/D FDB8444-F085 N-Channel PowerTrench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V) Pulsed (Note 1) EAS Single Pulse Avalanche Energy Power Dissipation PD Derate above 25oC (Note 2) TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Maximum Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TO-263, lin2 copper pad area Ratings 40 ± 20 70 Figure 4 307 167 1.1 -55 to +175 0.9 43 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking Device FDB8444 FDB8444-F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 u...