FDB8870-F085

FDB8870-F085 N-Channel PowerTrench® MOSFET FDB8870-F085 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications DC/DC converters Features rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability Qualified to AEC Q101 RoHS Compliant D GATE SOURCE TO-263AB DRAIN FDB SERIES (FLANGE) G S S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC Operating and Storage Temperature Ratings 30 ±20 160 150 23 Figure 4 300 160 1.07 -55 to 175 Units V V A A A A mJ W W/oC oC Thermal Characteristics RθJC Thermal Resistance Junction to Case TO-263 0.94 RθJA Thermal Resistance Junction to Ambient TO-263 ( Note 3) 62 RθJA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43 oC/W oC/W oC/W Package Mark...