FDBL9401-F085

FDBL9401-F085 N-Channel PowerTrench® MOSFET FDBL9401-F085 N-Channel PowerTrench® MOSFET 40 V, 300 A, 0.65 mΩ Features „ Typical RDS(on) = 0.5 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 220 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems D G S MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy Power Dissipation PD Derate Above 25oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 40 ±20 300 See Figure 4 1064 429 2.86 -55 to + 175 0.35 43 Units V V A mJ W W/oC oC oC/W oC/W Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.3mH, IAS = 84A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface presented here is of the based drain pins. RθJC is on mounting on a 1 guaranteed by design, in2 pad of 2oz copper. while RθJAis determined by...