FDBL9403-F085T6

MOSFET - Power, Single N-Channel, TOLL 40 V, 0.95 mW, 300 A FDBL9403-F085T6 Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable Small Footprint (TOLL) for Compact Design These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS +20/−16 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 300 A 217 159.6 W 79.8 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 50 A 36 4.3 W 2.1 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 3565 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 35 A, L = 1 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 330 A EAS 612.5 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJ...