FDC606P

FDC606P FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses ON Semiconductor’s low voltage PowerTrench process. It has been optimized for battery power management applications. Applications Battery management Load switch Battery protection Features –6 A, –12 V. RDS(ON) = 26 mΩ @ VGS = –4.5 V RDS(ON) = 35 mΩ @ VGS = –2.5 V RDS(ON) = 53 mΩ @ VGS = –1.8 V Fast switching speed High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G DD 1 6 2 5 3 4 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size .606 FDC606P 7’’ Ratings –12 ±8 –6 –20 1.6 0.8 –55 to +150 78 30 Tape width 8mm Units V V A W °C °C/W °C/W Quantity 3000 units 2001 Semiconductor Components Industries, LLC. September-2017, Rev. 5 Publication Order Number: FDC606P/D FDC606P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS...