FDC6323L

Integrated Load Switch FDC6323L Description These Integrated Load Switches are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance and provide superior switching performance. These devices are particularly suited for low voltage high side load switch application where low conduction loss and ease of driving are needed. Features VDROP = 0.2 V @ VIN = 5 V, IL = 1 A, VON/OFF = 1.5 V to 8 V VDROP = 0.3 V @ VIN = 3.3 V, IL = 1 A, VON/OFF = 1.5 V to 8 V High Density Cell Design for Extremely Low On−Resistance VON/OFF Zener Protection for ESD Ruggedness > 6 kV Human Body Model SUPERSOTt−6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities This is a Pb−Free and Halide Free Device VIN,R1 4 ON/OFF 5 R1, C1 6 Q2 Q1 3 VOUT, C1 2 VOUT, C1 1 R1 See Application Circuit Figure 1. DATA SHEET www.onsemi.com TSOT−23−6 CASE 419BL MARKING DIAGRAM &E&Y &.323&G &E = Designates Space &Y = Binary Calendar Year Coding Scheme &. = Pin One Dot 323 = Specific Device Code &G = Date Code ORDERING INFORMATION Device FDC6323L Package TSOT−23−6 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. VDROP + − IN OUT ON/OFF Figure 2. Equivalent Circuit © Semiconductor Componen...